MIL MIL-S-19500/331A PDF

Published Date: 03/19/2007

SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR(SUPERSEDING QML-19500-30)

Published Date: 11/18/2019

Semiconductor Device, Transistor, NPN, Silicon, High-Power Type 2N7368 JAN, JANTX, JANTXV,and JANS

Published Date: 10/09/2018

Semiconductor Device, Field Effect, Radiation Hardened Transistor, P-Channel, Silicon, Types 2N7389, 2N7390, 2N7389U, 2N7389U5, and 2N7390U, 2N7390U5, JANTXV, R, and F and JANS, R, and F

Published Date: 1997

Addendum b - Energy Conservation in Existing Buildings

Published Date: 1995

Standard 100-1995 -- Energy Conservation in Existing Buildings (ANSI Approved/IESNA cosponsored)

Published Date: 2006

Standard 100-2006 -- Energy Conservation in Existing Buildings (ANSI/IES Approved)

Published Date: 2017

Addenda a to Standard 100-2015 -- Energy Efficiency in Existing Buildings (ANSI Approved/IES Co-sponsored)

Published Date: 2017

Addenda b to Standard 100-2015 -- Energy Efficiency in Existing Buildings (ANSI Approved/IES Co-sponsored)

Published Date: 2017

Addenda c to Standard 100-2015 -- Energy Efficiency in Existing Buildings (ANSI Approved/IES Co-sponsored)