MIL MIL-S-19500/419 PDF

Published Date: 03/19/2007

SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR(SUPERSEDING QML-19500-30)

Published Date: 01/07/2015

Transistor, NPN, Silicon, Power, Radiation Hardened, Types 2N3418, 2N3419, 2N3420, 2N3421, JAN, JANTX, JANTXV, JANS, JANHC and JANKC

Published Date: 01/12/2018

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3055, JAN, JANTX, AND JANTXV

Published Date: 2019

Addendum a to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum aa to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum ab to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum ac to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2019

Addendum ad to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum ae to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)