This paper reports the performance of a novel W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's), and does not compromise frequency performance, at least up to 100 GHz.
| Number of Pages : | 10 |
| Published : | 11/01/2000 |
