OPTIMIZATION OF TUNNEL AND INTERLEVEL OXIDES IS ESSENTIAL FOR SUPERIOR EEPROM OPERATION. THIS PAPER DEMONSTRATES THAT FACTORIAL AND RESPONSE SURFACE EXPERIMENTAL METHODS PRODUCED EVIDENCE THAT THE FLOATING GATE DEPOSITION AND DOPING PROCESSES ARE CRITICAL TO THE FORMATION OF RELIABLE EEPROM DIELECTRICS. FURTHER, THESE OXIDES SHOULD NOT BE OPTIMIZED INDEPENDENTLY DUE TO PROCESS INTERACTIONS. RATHER, THE TUNNEL AND INTERLEVEL PROCESS SHOULD BE CONSIDERED AS A SINGLE PROCESS MODULE.
| Number of Pages : | 35 |
| Published : | 06/01/1990 |
