Plasma etching is used in a microelectronic device fabrication to delineate fine patterns into thin solid films. The etch rate and uniformity depend critically on the etchant concentration and its spatial distribution in the plasma reactor. In this study, a technique was developed to measure the etchant concentration profiles in a production parallel plate plasma etching reactor. The technique is based on spatially resolved optical emission spectroscopy and a data reduction algorithm. This technique may be readily implemented and used as a nonintrusive in-situ real time etch uniformity monitor.
| Number of Pages : | 12 |
| Published : | 06/01/1990 |
