BS EN 60749-6:2017 is to test and determine the effect on all solid state
electronic devices of storage at elevated temperature without electrical stress applied. This
test is typically used to determine the effects of time and temperature, under storage
conditions, for thermally activated failure methods and time-to-failure of solid state electronic
devices, including non-volatile memory devices (data-retention failure mechanisms). This test
is considered non-destructive but should preferably be used for device qualification. If such
devices are used for delivery, the effects of this highly accelerated stress test will need to be
evaluated.
Thermally activated failure mechanisms are modelled using the Arrhenius equation for
acceleration, and guidance on the selection of test temperatures and durations can be found
in IEC 60749-43.
Cross References:IEC 60749-43:2017
EN 60749-20 (IEC 60749-20:2008) AS
IEC 60749-20:2008
EN 60749-43:2017
All current amendments available at time of purchase are included with the purchase of this document. | File Size : | 1
file
, 810 KB |
| ISBN(s) : | 9780580948923 |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Number of Pages : | 12 |
| Product Code(s) : | 30344797, 30344797, 30344797 |
| Published : | 11/24/2017 |
