Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
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Detail specification for silicon coaxial resistive switching diode
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Detail specifications for silicon power rectifier diodes
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Detail specifications for silicon power rectifier diodes
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Detail specification for silicon n-p-n high frequency planar transistor
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Detail specification for coaxial mixer diodes
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Detail specification for silicon voltage regulator diodes
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Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: switching diodes
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Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q
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