DANSK DS/IEC 63275-2 PDF

DANSK DS/IEC 63275-2 PDF

Name:
DANSK DS/IEC 63275-2 PDF

Published Date:
05/17/2022

Status:
[ Active ]

Description:

Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation

Publisher:
Dansk Standard

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

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$14.7
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IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.


Edition : 22
File Size : 1 file , 1.5 MB
Number of Pages : 16
Product Code(s) : DS-013, DS-013
Published : 05/17/2022

History


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