DANSK DSF/PREN 60749-18 PDF

This part of IEC 60749 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 ( 118 60Co) gamma ray source. There are four tests presented in this procedure: a) a standard room temperature irradiation test b) an irradiation at elevated temperature/cryogenic temperature test c) an accelerated annealing test d) an Enhanced Low Dose Rate Sensitivity (ELDRS) test. The accelerated annealing test estimates how dose rate ionizing radiation effects on devices is important for low dose-rate or certain other applications in which devices may exhibit significant time-dependent effects. The ELDRS test determines if devices with bipolar linear components exhibit sensitivity to enhanced radiation induced damage at low dose rates This standard provides an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. This standard addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and space-related applications. This standard may produce severe degradation of the electrical properties of irradiated devices and thus should be considered a destructive test.