IEC 60747-9 Amd.1 Ed. 1.0 b:2001 PDF

IEC 60747-9 Amd.1 Ed. 1.0 b:2001 PDF

Name:
IEC 60747-9 Amd.1 Ed. 1.0 b:2001 PDF

Published Date:
08/20/2001

Status:
[ Withdrawn ]

Description:

Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Publisher:
International Electrotechnical Commission

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

SKU:

Choose Document Language:
$36
Need Help?

Edition : 1.0
File Size : 1 file , 600 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 79
Part of : IEC 60747-9 Ed. 1.1 b:2001
Published : 08/20/2001

History


Related products

IEC 60747-4-1 Ed. 1.0 en:2000
Published Date: 06/16/2000
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
$20.1
IEC 60747-8-1 Ed. 1.0 b:1987
Published Date: 12/30/1987
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz
$20.1
IEC 60747-4-2 Ed. 1.0 en:2000
Published Date: 04/07/2000
Semiconductor devices - Discrete devices - Part 4-2: Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification
$20.1
IEC 60747-8-4 Ed. 1.0 b:2004
Published Date: 09/24/2004
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
$101.7

Best-Selling Products