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IEC 63068-1 Ed. 1.0 en:2019 PDF

IEC 63068-1 Ed. 1.0 en:2019 PDF

Name:
IEC 63068-1 Ed. 1.0 en:2019 PDF

Published Date:
01/30/2019

Status:
Active

Description:

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Publisher:
International Electrotechnical Commission

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
SKU:
Choose Document Language:
$57
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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
Edition : 1.0
File Size : 1 file , 5.6 MB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 23
Published : 01/30/2019

History

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