Fabrication of GaAs Devices PDF

Fabrication of GaAs Devices PDF

Name:
Fabrication of GaAs Devices PDF

Published Date:
01/01/2005

Status:
[ Active ]

Description:

Publisher:
Institution of Engineering and Technology

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

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$42
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The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device.

Authors

A. Baca and C. Ashby


Edition : 05
File Size : 1 file , 2 MB
Number of Pages : 370
Published : 01/01/2005

History


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