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ISO 14706:2000 PDF

ISO 14706:2000 PDF

Name:
ISO 14706:2000 PDF

Published Date:
12/15/2000

Status:
Active

Description:

Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

Publisher:
International Organization for Standardization

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$41.7
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This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.

The method is applicable to:

  • elements of atomic number from 16 (S) to 92 (U);
  • contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2;
  • contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).

File Size : 1 file , 230 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 23
Published : 12/15/2000
Same As : ISO 14706:2000

History

ISO 14706:2014
ISO 14706:2014
Published Date: 08/01/2014
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
$49.8
ISO 14706:2000
ISO 14706:2000
Published Date: 12/15/2000
Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
$41.7

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