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JEDEC JESD60A PDF

JEDEC JESD60A PDF

Name:
JEDEC JESD60A PDF

Published Date:
09/01/2004

Status:
Active

Description:

A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS

Publisher:
JEDEC Solid State Technology Association

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
SKU:
Choose Document Language:
$20.1
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This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process.
File Size : 1 file , 85 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 24
Published : 09/01/2004

History

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