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JEDEC JESD90 PDF

JEDEC JESD90 PDF

Name:
JEDEC JESD90 PDF

Published Date:
11/01/2004

Status:
Active

Description:

A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIES

Publisher:
JEDEC Solid State Technology Association

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$18
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This document describes an accelerated stress and test methodology for measuring device parameter changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.
File Size : 1 file , 94 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 19
Published : 11/01/2004

History

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