MIL MIL-PRF-19500/428G PDF

Published Date: 08/08/2011

Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS

Published Date: 05/16/2006

THIS SPECIFICATION COVERS THE PERFORMANCE REQUIREMENTS FOR N-CHANNEL, JUNCTION, SILICON FIELD-EFFECT TRANSISTORS. THREE LEVELS OF PRODUCT ASSURANCE ARE PROVIDED FOR THE DEVICE TYPE AS SPECIFIED IN MIL-PRF-19500.(SUPERSEDING MIL-PRF-19500/428F)

Published Date: 05/25/2005

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB JAN, JANTX, JANTXV, AND JANS (SEE BASE FOR INACTIVATION NOTICE) (SUPERSEDING MIL-PRF-19500/428E)(S/S BY MIL-PRF-19500/428G)

Published Date: 03/18/2003

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/428D) (S/S BY MIL-PRF-19500/428F)

Published Date: 08/30/2000

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A, JAN JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/428C) (S/S BY MIL-PRF-19500/428E)

Published Date: 07/02/1999

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JAN, JANTX, JANTXV AND JANS (SUPERSEDING MIL-S-19500/428B) (S/S BY MIL-PRF-19500/428D)

Published Date: 03/05/1993

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JANTX, JANTXV AND JANS (SUPERSEDING MIL-S-19500/428A) (S/S BY MIL-PRF-19500/428C)

Published Date: 04/13/2018

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC

Published Date: 11/20/1968

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, TYPE 2N1854 (SUPERSEDING MIL-S-19500/172A)

Published Date: 03/25/2016

Diode, Silicon, Voltage Regulator, Types 1N6309 through 1N6355; Plus C and D Tolerance Suffix, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 2007