MIL MIL-PRF-19500/601C PDF

Published Date: 05/23/2016

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 04/17/2013

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 03/14/2012

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 06/10/2011

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 07/05/2006

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H(SUPERSEDING MIL-PRF-19500/601F)

Published Date: 11/16/2004

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H (SUPERSEDING MIL-PRF-19500/601E)(S/S BY MIL-PRF-19500/601G)

Published Date: 08/19/2003

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS N-CHANNEL SILICON TYPES 2N7261 -2N7262 AND U SUFFIXES JANTXVR F G H AND JANSR F G AND H (SUPERSEDING MIL-PRF-19500/601D) (S/S BY MIL-PRF-19500/601F)

Published Date: 07/17/2001

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS N-CHANNEL SILICON TYPES 2N7261 & 2N7262 AND U SUFFIXES JANTXVR F G & H & JANSR F G & H (SUPERSEDING MIL-PRF-19500/601C) (S/S BY MIL-PRF-19500/601E)

Published Date: 10/12/1997

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H (SUPERSEDING MIL-S-19500/601B) (S/S BY MIL-PRF-19500/601D)

Published Date: 06/06/1997

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND H (SUPERSEDING MIL-S-19500/601A) (S/S BY MIL-PRF-19500/601C)

Published Date: 01/21/1994

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND H (SUPERSEDING MIL-S-19500/601) (S/S BY MIL-PRF-19500/601B)

Published Date: 03/08/2019

Semiconductor Device, Thyristors (Controlled Rectifiers), Silicon, Types 2N682, 2N683, 2N685 through 2N692, 2N692A, 2N5206, JAN and JANTX

Published Date: 03/21/2005

SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPE 1N1147 AND 1N1149, JAN (SEE BASE FOR INACTIVATION NOTICE) (SUPERSEDING MIL-S-19500/254A)

Published Date: 06/28/1965

SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPE 1N430A, 1N430B

Published Date: 09/01/1998

Published Date: 05/01/1998

Published Date: 01/01/1997

Published Date: 12/01/1996

Published Date: 01/01/1997

Published Date: 07/01/1999