Name:
MIL MIL-PRF-19500/601H PDF

Published Date:
06/10/2011

Status:
Active

Description:

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

File Size :	1 file , 270 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	24
Published :	06/10/2011

History

MIL MIL-PRF-19500/601L

Published Date: 05/23/2016

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

$5.4

MIL MIL-PRF-19500/601K

Published Date: 04/17/2013

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

$5.4

MIL MIL-PRF-19500/601J

Published Date: 03/14/2012

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

$5.4

MIL MIL-PRF-19500/601H

Published Date: 06/10/2011

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

$5.4

MIL MIL-PRF-19500/601G

Published Date: 07/05/2006

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H(SUPERSEDING MIL-PRF-19500/601F)

$8.7

MIL MIL-PRF-19500/601F

Published Date: 11/16/2004

$8.7

MIL MIL-PRF-19500/601E

Published Date: 08/19/2003

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS N-CHANNEL SILICON TYPES 2N7261 -2N7262 AND U SUFFIXES JANTXVR F G H AND JANSR F G AND H (SUPERSEDING MIL-PRF-19500/601D) (S/S BY MIL-PRF-19500/601F)

$8.7

MIL MIL-PRF-19500/601D

Published Date: 07/17/2001

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS N-CHANNEL SILICON TYPES 2N7261 & 2N7262 AND U SUFFIXES JANTXVR F G & H & JANSR F G & H (SUPERSEDING MIL-PRF-19500/601C) (S/S BY MIL-PRF-19500/601E)

$8.7

MIL MIL-PRF-19500/601C

Published Date: 10/12/1997

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H (SUPERSEDING MIL-S-19500/601B) (S/S BY MIL-PRF-19500/601D)

$8.7

MIL MIL-PRF-19500/601B

Published Date: 06/06/1997

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND H (SUPERSEDING MIL-S-19500/601A) (S/S BY MIL-PRF-19500/601C)

$8.7