MIL MIL-PRF-19500/638 PDF

Published Date: 05/07/2004

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/638A)

Published Date: 03/24/1998

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPE 2N7410 JANSD AND JANSR (SUPERSEDING MIL-S-19500/638) (S/S BY MIL-PRF-19500/638B)

Published Date: 11/29/1996

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N7410 JANTXD, -R, JANTXVD, -R, AND JANSD, -R (S/S BY MIL-PRF-19500/638A)

Published Date: 04/28/2000

SEMICONDUCTOR DEVICE, DIODE, SCHOTTKY POWER RECTIFIERS, TYPES 1N6849- 1N6856, 1N6849U1- 1N6856U1 1N6849U2- 1N6856US AND 1N6849U3- 1N6856U3 JAN, JANTX AND JANTXV (SUPERSEDING MIL-PRF-19500/619A) (NO S/S DOCUMENT)

Published Date: 12/10/2013

Semiconductor Device, Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Types 2N7422, 2N7422U, 2N7423, and 2N7423U, JANTXVR and F and JANSR and F

Published Date: 03/06/2020

Transistor, NPN, Silicon, Switching, Device Types 2N5010 through 2N5015, JAN, JANTX, JANTXV, and JANS

Published Date: 01/01/2001

Published Date: 03/01/2000

Published Date: 01/01/2000

Published Date: 06/01/1998

Published Date: 01/01/1999

Published Date: 01/01/2001