MIL MIL-PRF-19500/638B PDF

Published Date: 05/07/2004

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/638A)

Published Date: 03/24/1998

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPE 2N7410 JANSD AND JANSR (SUPERSEDING MIL-S-19500/638) (S/S BY MIL-PRF-19500/638B)

Published Date: 11/29/1996

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N7410 JANTXD, -R, JANTXVD, -R, AND JANSD, -R (S/S BY MIL-PRF-19500/638A)

Published Date: 06/09/2003

SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFER, MODULE, HIGH VOLTAGE, 1N5597, 1N560, 1N5603, TX AND TXV(SUPERSEDING MIL-PRF-19500/404C)

Published Date: 05/09/2018

Diode, Silicon, Switching, Types 1N3070, 1N3070-1, 1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, JAN, JANTX, JANTXV, JANHC, and JANKC

Published Date: 05/25/2017

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3467, 2N3467L, 2N3468, 2N3468L, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/348E)

Published Date: 04/01/2001