Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to two radiation levels (ÛÏDÛ and ÛÏRÛ) are provided for JANTXV and JANS product assurance levels.

File Size :	1 file , 35 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	1
Published :	08/13/2013

MIL MIL-PRF-19500/687B Notice 1 - Validation PDF

Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

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