Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (Through Hole Package), Types 2N7482, 2N7483, and 2N7484, JANTXVR, F, G, and H and JANSR, F, G, and H

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANTXV and JANS product assurance levels.

File Size :	1 file , 260 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	23
Published :	02/26/2014

MIL MIL-PRF-19500/702D PDF

Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (Through Hole Package), Types 2N7482, 2N7483, and 2N7484, JANTXVR, F, G, and H and JANSR, F, G, and H

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