Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (ÛÏRÛ and ÛÏFÛ) are provided for JANTXV and JANS product assurance levels.

File Size :	1 file , 500 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	24
Published :	05/06/2015

MIL MIL-PRF-19500/733D PDF

Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

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