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MIL MIL-PRF-19500/733E PDF

MIL MIL-PRF-19500/733E PDF

Name:
MIL MIL-PRF-19500/733E PDF

Published Date:
11/04/2015

Status:
Active

Description:

Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

Publisher:
Military Specifications and Standards

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$5.4
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This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏR‰Û and ‰ÛÏF‰Û) are provided for JANTXV and JANS product assurance levels.
File Size : 1 file , 530 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 25
Published : 11/04/2015

History

MIL MIL-PRF-19500/733F
MIL MIL-PRF-19500/733F
Published Date: 06/09/2016
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
$7.2
MIL MIL-PRF-19500/733E
MIL MIL-PRF-19500/733E
Published Date: 11/04/2015
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
$5.4
MIL MIL-PRF-19500/733D
MIL MIL-PRF-19500/733D
Published Date: 05/06/2015
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
$5.4
MIL MIL-PRF-19500/733C
MIL MIL-PRF-19500/733C
Published Date: 04/18/2014
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
$5.4
MIL MIL-PRF-19500/733B
MIL MIL-PRF-19500/733B
Published Date: 09/10/2010
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
$5.4
MIL MIL-PRF-19500/733A
MIL MIL-PRF-19500/733A
Published Date: 11/12/2007
Semiconductor Device, Field Effect Radiation Hardened(Total Dose and Single Event Effects)Transistors, P-Channel, Silicon, Types 2N7523T1, 2N7523U2, 2N7524T1, and 2N7524U2,JANTXVR, F and JANSR, F
$8.7
MIL MIL-PRF-19500/733
MIL MIL-PRF-19500/733
Published Date: 11/30/2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
$8.7

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