IEC 62373-1 Ed. 1.0 b:2020 PDF

IEC 62373-1 Ed. 1.0 b:2020 PDF

Name:
IEC 62373-1 Ed. 1.0 b:2020 PDF

Published Date:
07/15/2020

Status:
Active

Description:

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Publisher:
International Electrotechnical Commission

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

SKU:

Choose Document Language:
$57
Need Help?
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.
Edition : 1.0
File Size : 1 file , 1.7 MB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 44
Published : 07/15/2020

History


Related products

IEC 60747-8-1 Ed. 1.0 b:1987
Published Date: 12/30/1987
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz
$20.1
IEC 60747-7-2 Ed. 1.0 b:1989
Published Date: 03/31/1989
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification
$16.2
IEC 60747-7 Ed. 3.1 b:2019
Published Date: 09/23/2019
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
$174.6
IEC 60747-9 Ed. 3.0 b:2019
Published Date: 11/13/2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
$125.1

Best-Selling Products