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IEC 62880-1 Ed. 1.0 en:2017 PDF

IEC 62880-1 Ed. 1.0 en:2017 PDF

Name:
IEC 62880-1 Ed. 1.0 en:2017 PDF

Published Date:
08/23/2017

Status:
Active

Description:

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard

Publisher:
International Electrotechnical Commission

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$57
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IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.
Edition : 1.0
File Size : 1 file , 970 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 24
Published : 08/23/2017

History

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