Name:
IEC 63275-1 Ed. 1.0 b:2022 PDF
Published Date:
04/01/2022
Status:
Active
Publisher:
International Electrotechnical Commission
This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
| Edition : | 1.0 |
| File Size : | 1 file , 1.1 MB |
| ISBN(s) : | 9782832211015 |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Number of Pages : | 30 |
| Published : | 04/01/2022 |
