Name:
ISO 17560:2002 PDF
Published Date:
07/15/2002
Status:
Active
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
| File Size : | 1 file , 460 KB |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Number of Pages : | 10 |
| Published : | 07/15/2002 |
| Same As : | ISO 17560:2002 |
